THE NOD PROJECT

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Resistance in Semiconductors

This video explains the different resistive phenomena in semiconductors. Particularly, it talks about a newly theorized phenomenon named: 'Induced Change in Resistance' (ICR). ICR has been instrumental in modeling the bulk resistance of p-n junction devices. Theorization of this phenomenon was also pivotal in disproving, the Nobel Laureate, William Shockley's General Diode Equation (GDE). A Modified General Diode Equation (MGDE) which includes ICR replaces the GDE for better agreement with measured results and extant circuit laws.